| PART |
Description |
Maker |
| HY29F800ABT-55 HY29F800ABR-90 HY29F800ABR-12 HY29F |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 8兆位1Mx8/512Kx16），5伏只，闪
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 55 ns, PDSO48
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 8兆位Mx8/512Kx16），5伏只，闪
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| MS58128J-45 MS58128J-55 UT68128LF-100 UT68128LF-15 |
IC 8MEG FLSH (512KX16) BOTTOM
IC 8MEG FLSH (512KX16) TOP SE
IC Flash Mem PARL 2.7v To 3.6v 8-MBit 512kx16/1mx8 90ns 48TSOP
IC Flash Mem PARL 2.7v To 3.6v 8-MBit 512kx16/1mx8 70ns 48TSOP x8的SRAM
x8 SRAM x8的SRAM
|
Intel, Corp.
|
| KM23C8100DT |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M(1Mx8 /512Kx16) CMOS掩膜 ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY29F800 |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
|
Hynix Semiconductor
|
| KM23V8100D |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M1Mx8 /512Kx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K5A3280YBA |
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM
|
SAMSUNG
|
| UT7164-55PCA6 UT7164-55PSA6 UT7164-85PCC6 UT7164-5 |
Combo Memory 2M x 16 Flash 256kx16 SRAM 3.3v 56FBGA
Combo Memory 2M x 16 Flash 512kx16 SRAM 3.3v 56FBGA Tray
Combo Memory 4M x 16 Flash 512kx16/1mx8 SRAM 3.3v 73FBGA Tray
x8 SRAM x8的SRAM
|
ITT, Corp.
|
| MX29SL800CTXHC-90 MX29SL800CTXHC-90G MX29SL800CBXH |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY 800万位[1Mx8/512K x16] CMOS单电压仅1.8V的闪
|
Macronix International Co., Ltd.
PROM
|
| KM23V8000D |
8M-Bit (1Mx8) CMOS Mask ROM(8M(1Mx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY29F080 HY29F080G12 HY29F080G70 HY29F080G90 HY29F |
8 Megabit (1M x 8)/ 5 Volt-only/ Flash Memory
8 Megabit (1M x 8), 5 Volt-only, Flash Memory
IC,EEPROM,NOR FLASH,1MX8,CMOS,TSOP,40PIN,PLASTIC
From old datasheet system
|
HYNIX[Hynix Semiconductor]
|
| ES29DL160E-90WC ES29DL640E-90WC ES29BDS160E-90WC E |
8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
|
优先(苏州)半导体有限公
|
| ACTSF512K16 ACT-SF512K16N-37F18T ACT-SF512K16N-37F |
ACT-SF512K16 High Speed 512Kx16 SRAM/FLASH Multichip Module
|
AEROFLEX[Aeroflex Circuit Technology]
|
